MOSFET 73 Amps 300V 0.042 Rds
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Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Features: • International standard packages• JEDECTO-264 AA,epoxymeet UL 94 V-0, flamm...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 300 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 73 A | ||
| Resistance Drain-Source RDS (on) : | 0.045 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-264AA | Packaging : | Tube |
| Symbol | Test Conditions | Maximum | Ratings |
| VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M |
300 300 |
V V |
| VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
| ID25 IDM IAR |
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C |
73 292 73 |
A A A |
|
EAR |
TC = 25°C TC = 25°C |
60 2.5 |
mJ J |
| dv/dt | IS IDM, di/dt 100 A/s, VDD VDSS TJ 150°C, RG = 2 |
5 | V/ns |
| PD | TC = 25°C | 500 | W |
| TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
| TL | 1.6 mm (0.062 in.) from case for 10 s | 300 | °C |
| Md |
Mounting torque |
0.4/6 |
Nm/lb.in. |
| Weight | PLUS 247/ISOPLUS 247 TO-264 |
6 10 |
g g |
| Technical/Catalog Information | IXFK73N30Q |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 300V |
| Current - Continuous Drain (Id) @ 25° C | 73A |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 5400pF @ 25V |
| Power - Max | 500W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 195nC @ 10V |
| Package / Case | TO-264 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXFK73N30Q IXFK73N30Q |