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IXFK88N30P

MOSFET 88 Amps 300V 0.04 Rds

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SeekIC No. : 00154471 Detail

IXFK88N30P: MOSFET 88 Amps 300V 0.04 Rds

IXFK88N30P Data Sheet

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Part Number:
IXFK88N30P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 88 A
Resistance Drain-Source RDS (on) : 0.04 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264 Packaging : Box    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 88 A
Package / Case : TO-264
Drain-Source Breakdown Voltage : 300 V
Resistance Drain-Source RDS (on) : 0.04 Ohms
Packaging : Box


Parameters:

Technical/Catalog InformationIXFK88N30P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C88A
Rds On (Max) @ Id, Vgs40 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 6300pF @ 25V
Power - Max600W
PackagingBulk
Gate Charge (Qg) @ Vgs180nC @ 10V
Package / CaseTO-264
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK88N30P
IXFK88N30P



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