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IXFN170N30P

MOSFET 138 Amps 300V 0.018 Rds

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SeekIC No. : 00151267 Detail

IXFN170N30P: MOSFET 138 Amps 300V 0.018 Rds

IXFN170N30P Data Sheet

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Part Number:
IXFN170N30P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 138 A
Resistance Drain-Source RDS (on) : 18 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-227-B Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 18 mOhms
Drain-Source Breakdown Voltage : 300 V
Continuous Drain Current : 138 A
Package / Case : SOT-227-B


Parameters:

Technical/Catalog InformationIXFN170N30P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C138A
Rds On (Max) @ Id, Vgs18 mOhm @ 85A, 10V
Input Capacitance (Ciss) @ Vds 20000pF @ 25V
Power - Max890W
PackagingTube
Gate Charge (Qg) @ Vgs258nC @ 10V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFN170N30P
IXFN170N30P



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