IXFN180N10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 180 A
Configuration : Single Dual Source
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.008 Ohms


Features:

· International standard package
·Encapsulating epoxy meets UL 94 V-0, flammability classification
·miniBLOC with Aluminium nitride isolation
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
·Fast intrinsic Rectifier

Application

·DC-DC converters
·Synchronous rectification
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·Temperature and lighting controls
·Low voltage relays

Specifications

VDSS VDGR	TJ = 25 to 150 TJ = 25 to 150, RGS = 1M	100 100	V V
VGS VGSM	Continuous Transient	±20 ±30	V V
ID25 IL(RMS) IDM IAR	TC = 25 Terminal (current limit) TC = 25; Note 1 TC = 25	180 100 720 180	A A A A
EAR EAS	TC = 25 TC = 25	60 3	mJ J
dv/dt	IS IDM, di/dt 100 A/s, VDD VDSS TJ 150, RG = 2	5	V/ns
PD	TC = 25	600	W
TJ TJM Tstg		-55 ... +150 150 -55 ... +150
TL	1.6 mm (0.063 in) from case for 10 s	300
VISOL	50/60 Hz, RMS t = 1 min IISOL 1 mA t = 1 s	2500 3000	V~ V~
Md	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		30	g

Parameters:

Technical/Catalog Information	IXFN180N10
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	180A
Rds On (Max) @ Id, Vgs	8 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	9100pF @ 25V
Power - Max	600W
Packaging	Tube
Gate Charge (Qg) @ Vgs	360nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN180N10 IXFN180N10