IXFN200N10P Selling Leads, Price trend , Ixys, IXFN200N10P DataSheet download, circuit diagram from SeekIC.com

See larger image

SeekIC No. : 00154179 Detail

IXFN200N10P: MOSFET 200 Amps 100V 0.0075 Rds

IXFN200N10P Data Sheet

Get Latest Price

Part Number:: IXFN200N10P
Mfg:: Ixys
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/4/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

IXFN 23N100 evaluate
Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
IXFN 24N100 evaluate
Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
IXFN 24N100F evaluate
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	200 A
Resistance Drain-Source RDS (on) :	0.0075 Ohms	Configuration :	Single Dual Source
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-227B	Packaging :	Box

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Configuration : Single Dual Source
Package / Case : SOT-227B
Continuous Drain Current : 200 A
Resistance Drain-Source RDS (on) : 0.0075 Ohms
Packaging : Box

Parameters:

Technical/Catalog Information	IXFN200N10P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	200A
Rds On (Max) @ Id, Vgs	7.5 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	7600pF @ 25V
Power - Max	680W
Packaging	Tube
Gate Charge (Qg) @ Vgs	235nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN200N10P IXFN200N10P

Customers Who Bought This Item Also Bought

IXFN100N20 HiPerFET Power MOSFETs
US $$1.64 - 1.66 / Piece

Supply Ability:2000Week

View details
IXFN100N20 Trans MOSFET N-CH 200V 100A 4-Pin SOT-227B
US $$8.60 - 12.50 / Piece

Supply Ability:321Week

View details
IXFN100N50P
US $$18.00 - 30.00 / Piece

Supply Ability:10000Week

View details
IXFN100N50P
US $$10.00 - 14.00 / Piece

Supply Ability:1Day

View details
IXFN100N50P Trans MOSFET N-CH 500V 90A 4-Pin SOT-227B
US $$8.60 - 12.60 / Piece

Supply Ability:243Week

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

IXFN200N10P

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Quick Details

Description

Customers Who Bought This Item Also Bought

Prototyping Products(332)

Programmers, Development Systems(1039)

Test Equipment(3237)

Potentiometers, Variable Resistors(1370)

RF and RFID(1780)

Audio Products(940)