IXFN27N80 Selling Leads, Price trend , Ixys, IXFN27N80 DataSheet download, circuit diagram from SeekIC.com

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IXFN27N80: MOSFET 800V 27A

IXFN27N80 Data Sheet

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Part Number:: IXFN27N80
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2025/12/6

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	800 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	27 A
Resistance Drain-Source RDS (on) :	0.3 Ohms	Configuration :	Single Dual Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-227B	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.3 Ohms
Drain-Source Breakdown Voltage : 800 V
Configuration : Single Dual Source
Continuous Drain Current : 27 A
Package / Case : SOT-227B

Parameters:

Technical/Catalog Information	IXFN27N80
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	27A
Rds On (Max) @ Id, Vgs	300 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	9740pF @ 25V
Power - Max	520W
Packaging	Tube
Gate Charge (Qg) @ Vgs	400nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN27N80 IXFN27N80

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IXFN27N80

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