IXFN44N80

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 44 A
Resistance Drain-Source RDS (on) : 0.165 Ohms
Drain-Source Breakdown Voltage : 800 V
Configuration : Single Dual Source
Package / Case : SOT-227B


Features:

· International standard packages
· miniBLOC, with Aluminium nitride isolation
· Low R_{DS (on)} HDMOS^TM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
· Fast intrinsic Rectifier


Application

· DC-DC converters
· Battery chargers
· Switched-mode and resonant-mode power supplies
· DC choppers
· Temperature and lighting controls


Parameters:

Technical/Catalog Information	IXFN44N80
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	44A
Rds On (Max) @ Id, Vgs	165 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	10000pF @ 25V
Power - Max	700W
Packaging	Tube
Gate Charge (Qg) @ Vgs	380nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN44N80 IXFN44N80