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IXFN48N50U2

MOSFET 48 Amps 500V 0.1 Rds

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SeekIC No. : 00159137 Detail

IXFN48N50U2: MOSFET 48 Amps 500V 0.1 Rds

IXFN48N50U2 Data Sheet

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Part Number:
IXFN48N50U2
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 48 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-227B Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 48 A
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.1 Ohms


Features:

· Popular Buck & Boost circuit topologies
· International standard package miniBLOC SOT-227B
· Aluminium nitride isolation
   - high power dissipation
· Isolation voltage 3000 V~
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Low drain-to-case capacitance (<60 pF)
    - reduced RFI
· Ultra-fast FRED diode with soft reverse recovery


Application

·Power factor controls and buck regulators
·DC servo and robotic drives
·DC choppers
·Switch reluctance motor controls


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M		 500
500		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 V
V
ID25
IDM
IAR
 TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
 44N50 44
48N50 48
44N50 176
48N50 192		 A
A
A
A


EAR
EAS

 TC = 25°C
TC = 25°C		 24
30

mJ
J

dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2 		5 V/ns
PD TC = 25°C 520 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
VISOL 50/60 Hz, RMS t = 1 min
IISOL 1 mA t = 1 s		 2500
3000		 V~
V~
Md
 Mounting torque
Terminal connection torque
 1.5/13
1.5/13
 Nm/lb.in.
Nm/lb.in.
Weight   30 g



Parameters:

Technical/Catalog InformationIXFN48N50U2
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C48A
Rds On (Max) @ Id, Vgs100 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 8400pF @ 25V
Power - Max520W
PackagingTube
Gate Charge (Qg) @ Vgs270nC @ 10V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFN48N50U2
IXFN48N50U2



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