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IXFN58N50

Features: • International standard package• Isolation voltage 3000V (RMS)• Low RDS (on) HDMOSTM processl• Rugged polysilicon gate cell structure• Low drain-to-case capacitance (<60 pF) - reduced RFI• Low package inductance (< 10 nH) -easy to drive and to p...

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SeekIC No. : 004381557 Detail

IXFN58N50: Features: • International standard package• Isolation voltage 3000V (RMS)• Low RDS (on) HDMOSTM processl• Rugged polysilicon gate cell structure• Low drain-to-case capa...

IXFN58N50 Data Sheet

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Part Number:
IXFN58N50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

• International standard package
• Isolation voltage 3000V (RMS)
• Low RDS (on) HDMOSTM processl
• Rugged polysilicon gate cell structure
• Low drain-to-case capacitance (<60 pF)
   - reduced RFI
• Low package inductance (< 10 nH)
   - easy to drive and to protect
• Aluminium Nitride Isolation
   - increased current ratings


Application

• DC choppers
• AC motor speed controls
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched mode and resonant mode power supplies


Specifications

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
500
500
V
V
VGS
VGEM		 Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25°C
TC = 25°C (1)
IXFN 58N50
IXFN 61N50
IXFN 58N50
IXFN 61N50
58
61
232
244
A
A
A
A
PD TC = 25°C
625
W

TJ
TJM
Tstg

  
-40 ... +150
             150
-40 ... +150
°C
°C
°C
°C
VISOL 50/60 Hz, RMS
t = 1 minute
t = 1s
2500
3000
V~
V~
Md Mounting torque
Terminal connection torque (M4)
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in..
.
Weight  
30
g
EAR

 
75
mJ



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