IXFN72N55Q2

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 72 A
Drain-Source Breakdown Voltage : 550 V
Configuration : Single Dual Source
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.072 Ohms


Features:

•Double metal process for low gate resistance
•miniBLOC, with Aluminium nitride isolation
•Unclamped Inductive Switching (UIS) rated
•Low package inductance
•Fast intrinsic Rectifier


Application

•DC-DC converters
•Switched-mode and resonant-mode power supplies
•DC choppers
•Pulse generators


Specifications

Symbol	Test Conditions	Maximum Ratings
VDSS VDGR	TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M	500 500	V V
VGS VGEM	Continuous Transient	±30 ±40	V V
ID25 IDM IAR	TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C	72 288 72	A A A
EAR EAS	TC = 25°C TC = 25°C	60 5.0	mJ J
dv/dt	IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2Ω	20	V/ns
PD	TC = 25°C	890	W
TJ TJM Tstg		-55 ... +150              150 -55 ... +150	°C °C °C
VISOL	50/60 Hz, RMS, t = 1 minute	2500	V
Md	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.. .
Weight		30	g

Parameters:

Technical/Catalog Information	IXFN72N55Q2
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25° C	72A
Rds On (Max) @ Id, Vgs	72 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	10500pF @ 25V
Power - Max	890W
Packaging	Tube
Gate Charge (Qg) @ Vgs	258nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN72N55Q2 IXFN72N55Q2