IXFN73N30

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Dual Source
Continuous Drain Current : 73 A
Package / Case : SOT-227B
Drain-Source Breakdown Voltage : 300 V
Resistance Drain-Source RDS (on) : 0.045 Ohms


Features:

· International standard packages
· JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification
· miniBLOC with Aluminium nitride isolation
·Low R_{DS (on)} HDMOS^TM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
· Fast intrinsic Rectifier


Application

· DC-DC converters
· Synchronous rectification
· Battery chargers
· Switched-mode and resonant-mode power supplies
· DC choppers
· Temperature and lighting controls
· Low voltage relays


Specifications

Symbol	Test Conditions	IXFK	IXFN	Ratings
VDSS VDGR	TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M	300 300	300 300	V V
VGS VGSM	Continuous Transient	±20 ±30	±20 ±30	V V
ID25 IDM IAR	TC = 25°C TC = 25°Cpulse width limited by TJM TC = 25°C	73 292 40	73 292 40	A A A
EAR	TC = 25°C	30	30	mJ
dv/dt	IS IDM, di/dt 100 A/s, VDD VDSS TJ 150°C, RG = 2	5		V/ns
PD	TC = 25°C	500	520	W
TJ TJM Tstg		-55 ... +150 150 -55 ... +150		°C °C °C
TL	1.6 mm (0.062 in.) from case for 10 s	300	-	°C
Md	Mounting torque Terminal connection torque	0.9/6 -	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		10	30	g

Description

 


Parameters:

Technical/Catalog Information	IXFN73N30
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	73A
Rds On (Max) @ Id, Vgs	45 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	9000pF @ 25V
Power - Max	520W
Packaging	Tube
Gate Charge (Qg) @ Vgs	360nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN73N30 IXFN73N30