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IXFR 180N10

Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation• Low drain to tab capacitance(<25pF)• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Unclamped Inductiv...

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IXFR 180N10: Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation• Low drain to tab capacitance(<25pF)• ...

IXFR 180N10 Data Sheet

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Part Number:
IXFR 180N10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Silicon chip on Direct-Copper-Bond substrate
  - High power dissipation
  - Isolated mounting surface
  - 2500V electrical isolation
• Low drain to tab capacitance(<25pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Fast intrinsic Rectifier


Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control


Specifications

Symbol Test Conditions
VDSS TJ = 25 to 150 100 V
VDGR TJ = 25 to 150; RGS = 1 M 100 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC = 25 (MOSFET chip capability) 165 A
ID(RMS) External lead (current limit) 76 A
IDM TC = 25, Note 1 720 A
IAR TC = 25 180 A
EAR TC = 25 60 mJ
EAS TC = 25 3 J
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150, RG = 2 		5 V/ns
PD TC = 25 400 W
TJ -55 ... +150
TJM 150
Tstg -55 ... +150
TL 1.6 mm (0.063 in.) from case for 10 s 300
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
Weight 5 g



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