IXFX15N100

MOSFET 1KV 15A

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IXFX15N100 Picture
SeekIC No. : 00150971 Detail

IXFX15N100: MOSFET 1KV 15A

floor Price/Ceiling Price

Part Number:
IXFX15N100
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 15 A
Drain-Source Breakdown Voltage : 1000 V
Package / Case : PLUS 247
Resistance Drain-Source RDS (on) : 0.7 Ohms


Features:

International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS) rated
Low package inductance
  - easy to drive and to protect
Fast intrinsic Rectifier



Application

DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
AC motor control
Temperature and lighting controls



Parameters:

Technical/Catalog InformationIXFX15N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs700 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4500pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs220nC @ 10V
Package / CasePLUS 247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFX15N100
IXFX15N100



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