Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Unclamped Inductive Switching (UIS) rated·Low package inductance - easy to drive and to protect·Fast intrinsic RectifierApplication·DC-DC converters·Battery chargers·Switched-mode and res...
IXFX16N90: Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Unclamped Inductive Switching (UIS) rated·Low package inductance - easy to drive and to...
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Features: SpecificationsDescription IXFX 100N25 is a type of HiPerFET power MOSFETs which has six ...
Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate...
Features: ·International standard packages· Fast recovery diode·Unclamped Inductive Switching (UIS...
Symbol | Test Conditions | Maximum | Ratings |
VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C.RGS=1M |
900 900 |
V V |
VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
ID25 IDM IAR |
TC = 25°C TC = 25°C pulse width limited by TJM TC = 25°C |
16 64 16 |
A A A A |
EAR |
TC = 25°C |
45 |
mJ |
dv/dt | IS IDM, di/dt 100 A/s, VDD VDSS TJ 150°C, RG = 2 |
5 | V/ns |
PD | TC = 25°C | 360 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
TL | 1.6 mm (0.062 in.) from case for 10 s | 300 | °C |
Md |
Mounting torque |
1.13/10 |
Nm/lb.in. |
Weight | 6 | g |