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IXFX64N50P

MOSFET 64.0 Amps 500 V 0.09 Ohm Rds

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SeekIC No. : 00154335 Detail

IXFX64N50P: MOSFET 64.0 Amps 500 V 0.09 Ohm Rds

IXFX64N50P Data Sheet

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Part Number:
IXFX64N50P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 64 A
Resistance Drain-Source RDS (on) : 0.085 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.085 Ohms
Continuous Drain Current : 64 A
Package / Case : PLUS 247


Parameters:

Technical/Catalog InformationIXFX64N50P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C64A
Rds On (Max) @ Id, Vgs85 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 8700pF @ 25V
Power - Max830W
PackagingTube
Gate Charge (Qg) @ Vgs150nC @ 10V
Package / CasePLUS 247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFX64N50P
IXFX64N50P



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