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IXFX90N20Q

MOSFET 200V 90A

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SeekIC No. : 00159286 Detail

IXFX90N20Q: MOSFET 200V 90A

IXFX90N20Q Data Sheet

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Part Number:
IXFX90N20Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/11

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 90 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Continuous Drain Current : 90 A
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Package / Case : PLUS 247
Resistance Drain-Source RDS (on) : 0.022 Ohms


Features:

· IXYS advanced low Qg process
· Low gate charge and capacitances
    - easier to drive
    - faster switching
·International standard packages
· Low RDS (on)
· Rated for unclamped Inductive load witching (UIS) rated
· Molding epoxies meet UL 94 V-0 lammability classification




Application

·DC-DC converters
· Battery chargers
· Switched-mode and resonant-mode ower supplies
· DC choppers
· AC motor control
· Temperature and lighting controls


Specifications

Symbol Test Conditions
Maximum
Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
300
300
V
V
VGS
VGSM		 Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR		 TC = 25°C
TC = 25°C, pulse widthlimited by TJM
TC = 25°C
73
292
73
A
A
A
EAR
EAS		 TC = 25°C
TC = 25°C
60
2.5
J
mJ
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2
5
V/ns
PD TC = 25°C
500
W
TJ
TJM
Tstg		  
-55 ... +150
150
-55 ... +150


TL 1.6 mm (0.063 in.) from case for 10 s
300
MD Mounting torque TO-264
0.4/6
Nm/lb.in.
Weight PLUS 247
TO-264
6
10
g



Parameters:

Technical/Catalog InformationIXFX90N20Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C90A
Rds On (Max) @ Id, Vgs22 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 6800pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs190nC @ 10V
Package / CasePLUS 247
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IXFX90N20Q
IXFX90N20Q



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