IGBT Transistors 24 Amps 1200V 2.7 Rds
IXGA12N120A2: IGBT Transistors 24 Amps 1200V 2.7 Rds
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Features: • International standard packages JEDEC TO-220AB and TO-263AA• Second genera...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
| Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-263-3 | Packaging : | Tube |
| Technical/Catalog Information | IXGA12N120A2 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 24A |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 12A |
| Power - Max | 75W |
| Mounting Type | Surface Mount |
| Package / Case | D²Pak, TO-263 (2 leads + tab) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXGA12N120A2 IXGA12N120A2 |