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IXGA12N60B

IGBT Transistors 24 Amps 600V 2.1 Rds

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SeekIC No. : 00143541 Detail

IXGA12N60B: IGBT Transistors 24 Amps 600V 2.1 Rds

IXGA12N60B Data Sheet

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Part Number:
IXGA12N60B
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-263AA-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-263AA-3


Features:

· Moderate frequency IGBT and antiparallel FRED in one package
· New generation HDMOSTM process
· International standard package JEDEC TO-220AB and TO-263AA
· High peak current handling capability


Application

· PFC circuit
· AC motor speed control
· DC servo and robot drives
· Switch-mode and resonant-mode power supplies


Parameters:

Technical/Catalog InformationIXGA12N60B
VendorIXYS
CategoryDiscrete Semiconductor Products
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGA12N60B
IXGA12N60B



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