IXGA4N100

IGBT Transistors 8 Amps 1000V 2.7 Rds

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IXGA4N100 Picture
SeekIC No. : 00143640 Detail

IXGA4N100: IGBT Transistors 8 Amps 1000V 2.7 Rds

floor Price/Ceiling Price

Part Number:
IXGA4N100
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/5/1

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1000 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-263AA-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1000 V
Package / Case : TO-263AA-3


Parameters:

Technical/Catalog InformationIXGA4N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)8A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 4A
Power - Max40W
Mounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGA4N100
IXGA4N100



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