IGBT Transistors 8 Amps 600V 2.3V Rds
IXGC16N60B2D1: IGBT Transistors 8 Amps 600V 2.3V Rds
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
| Collector-Emitter Saturation Voltage : | 2.3 V | Maximum Gate Emitter Voltage : | +/- 20 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | ISOPLUS220-3 |
| Packaging : | Tube |
| Technical/Catalog Information | IXGC16N60B2D1 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 28A |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 12A |
| Power - Max | 63W |
| Mounting Type | Through Hole |
| Package / Case | ISOPLUS220? |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXGC16N60B2D1 IXGC16N60B2D1 |