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IXGH12N60B

IGBT Transistors 24 Amps 600V 2.1 Rds

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SeekIC No. : 00143618 Detail

IXGH12N60B: IGBT Transistors 24 Amps 600V 2.1 Rds

IXGH12N60B Data Sheet

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Part Number:
IXGH12N60B
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247AD-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247AD-3


Features:

• Moderate frequency IGBT
• New generation HDMOSTM process
• International standard package JEDEC TO-247
• High peak current handling capability


Application

• PFC circuit
• AC motor speed control
• DC servo and robot drives
• Switch-mode and resonant-mode power supplies


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M		 600
600		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 V
V
Ic25
Ic90
ICM
 TC = 25°C
TC = 90°C
TC = 25°C 1 ms
 24
12
48

A
A
A


SSOA
(RBSOA)		 VGE= 15 V, TVJ = 125°C, RG = 10
Clamped inductive load, L = 100 H		 ICM = 24
@ 0.8 VCES		 V/ns
Pc TC = 25°C 100 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
Md Mounting torque with screw M3
Mounting torque with screw M3.5		 0.45/4
0.55/5		 Nm/lb.in.
Nm/lb.in.
Weight   6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s		 300 °C



Parameters:

Technical/Catalog InformationIXGH12N60B
VendorIXYS
CategoryDiscrete Semiconductor Products
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGH12N60B
IXGH12N60B



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