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IXGH15N120B2D1

IGBT Transistors 30 Amps 1200V 2.7 V Rds

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SeekIC No. : 00143564 Detail

IXGH15N120B2D1: IGBT Transistors 30 Amps 1200V 2.7 V Rds

IXGH15N120B2D1 Data Sheet

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Part Number:
IXGH15N120B2D1
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Collector- Emitter Voltage VCEO Max : 1200 V Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Configuration :
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 1200 V


Parameters:

Technical/Catalog InformationIXGH15N120B2D1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)30A
Vce(on) (Max) @ Vge, Ic3.3V @ 15V, 15A
Power - Max192W
Mounting TypeThrough Hole
Package / CaseTO-247AD
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGH15N120B2D1
IXGH15N120B2D1



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