IXGH16N170

IGBT Transistors 32 Amps 1700 V 3.5 V Rds

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IXGH16N170 Picture
SeekIC No. : 00142985 Detail

IXGH16N170: IGBT Transistors 32 Amps 1700 V 3.5 V Rds

floor Price/Ceiling Price

Part Number:
IXGH16N170
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1700 V
Maximum Gate Emitter Voltage : 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Package / Case : TO-247-3
Collector- Emitter Voltage VCEO Max : 1700 V


Features:






Specifications






Description

      The IXGH16N170 is designed as high voltage IGBT which typical applications include capacitor discharge & pulser circuits, AC motor speed control, DC servo and robot drives, DC choppers, uninterruptible power supplies (UPS), switched-mode and resonant-mode and power supplies.
     The IXGH16N170  has five features. The first one is that it would have international standard packages JEDEC TO-268 and JEDEC TO-247 AD. The second one is that it would have high current handling capability. The next one is it would use the MOS gate turn-on which would drive simplicity. The next one is it would be rugged NPT structure. The next one is that its molding epoxies meet UL 94 V-0 flammability classification. That are all the main features.
      Some absolute maximum ratings of IXGH16N170  have been concluded into several points as follow. The first one is about its Vces from Tj = 25°C to 150°C which would be 1700 V. The next one is about its Vcgr from Tj = 25°C to 150°C and Rge = 1 M which would be 1700 V. The next one is about its Vges continuous which would be ±20 V. The next one is about its Vgem transient which would be ±30 V. The next one is about its Ic25 at Tc = 25°C which would be 32 A. The next one is about its Ic90 at Tc = 90°C which would be 16 A. The next one is about its Icm at Tc = 25°C, 1 ms which would be 80 A. The next one is about its Pc at Tc = 25°C which would be 190 W. The next one is about its Tj which would be -55 to +150 °C. The next one is about its Tjm which would be 150 °C. The next one is about its Tstg which would be from -55 to +150 °C. The next one is about its maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s which would be 300 °C. The next one is about its maximum Tab temperature for soldering SMD devices for 10 s which would be 260 °C. And so on. For more information please contact us.






Parameters:

Technical/Catalog InformationIXGH16N170
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)32A
Vce(on) (Max) @ Vge, Ic3.5V @ 15V, 16A
Power - Max190W
Mounting TypeThrough Hole
Package / CaseTO-247
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGH16N170
IXGH16N170



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