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IXGH24N60C: IGBT Transistors 48 Amps 600V 2.3 Rds

IXGH24N60C Data Sheet

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Part Number:: IXGH24N60C
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Upload time: 2024/4/27

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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Maximum Gate Emitter Voltage :	+/- 20 V	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-247AD-3	Packaging :	Tube

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247AD-3

Features:

• International standard packages JEDEC TO-247 and surface mountable TO-268
• High frequency IGBT
• High current handling capability
• Latest generation HDMOSTM process
• MOS Gate turn-on
- drive simplicity

Application

• PFC circuits
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers

Parameters:

Technical/Catalog Information	IXGH24N60C
Vendor	IXYS
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	48A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 24A
Power - Max	150W
Mounting Type	Through Hole
Package / Case	TO-247AD
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXGH24N60C IXGH24N60C

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IXGH24N60C

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