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IXGH32N170

IGBT Transistors 72 Amps 1700 V 3.3 V Rds

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SeekIC No. : 00142728 Detail

IXGH32N170: IGBT Transistors 72 Amps 1700 V 3.3 V Rds

IXGH32N170 Data Sheet

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Part Number:
IXGH32N170
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1700 V
Maximum Gate Emitter Voltage : 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Package / Case : TO-247-3
Collector- Emitter Voltage VCEO Max : 1700 V


Features:

·International standard packages 
   JEDEC TO-268 and
   JEDEC TO-247 AD
·High current handling capability
·MOS Gate turn-on
   - drive simplicity
·Rugged NPT structure
·Molding epoxies meet UL 94 V-0
   flammability classification


Application

􀁺 ·Capacitor discharge & pulser circuits
􀁺 ·AC motor speed control
􀁺 ·DC servo and robot drives
􀁺 ·DC choppers
􀁺 ·Uninterruptible power supplies (UPS)
􀁺 ·Switched-mode and resonant-mode power supplies


Parameters:

Technical/Catalog InformationIXGH32N170
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)75A
Vce(on) (Max) @ Vge, Ic3.3V @ 15V, 32A
Power - Max350W
Mounting TypeThrough Hole
Package / CaseTO-247AD
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGH32N170
IXGH32N170



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