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IXGH32N60AU1

IGBT Transistors 32 Amps 600V

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SeekIC No. : 00143039 Detail

IXGH32N60AU1: IGBT Transistors 32 Amps 600V

IXGH32N60AU1 Data Sheet

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Part Number:
IXGH32N60AU1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247AD-3    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247AD-3


Features:

International standard packages
   JEDEC TO-247 SMD surface
   mountable and JEDEC TO-247 AD
High frequency IGBT and antiparallel
   FRED in one package
High current handling capability
2nd generation HDMOSTM process
MOS Gate turn-on
   - drive simplicity


Application

AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode power supplies


Parameters:

Technical/Catalog InformationIXGH32N60AU1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Mounting TypeThrough Hole
Package / CaseTO-247AD
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGH32N60AU1
IXGH32N60AU1



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