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IXGH32N60CD1

IGBT Transistors 60 Amps 600V 2.5 Rds

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SeekIC No. : 00142664 Detail

IXGH32N60CD1: IGBT Transistors 60 Amps 600V 2.5 Rds

IXGH32N60CD1 Data Sheet

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Part Number:
IXGH32N60CD1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247 AD-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247 AD-3


Parameters:

Technical/Catalog InformationIXGH32N60CD1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 32A
Power - Max200W
Mounting TypeThrough Hole
Package / CaseTO-247AD
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGH32N60CD1
IXGH32N60CD1



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