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IXGJ40N60C2D1

IGBT Transistors 40 Amps 600V 2.7 V Rds

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SeekIC No. : 00143945 Detail

IXGJ40N60C2D1: IGBT Transistors 40 Amps 600V 2.7 V Rds

IXGJ40N60C2D1 Data Sheet

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Part Number:
IXGJ40N60C2D1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.5 V Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-268 (I3 - PAK)-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.5 V
Package / Case : TO-268 (I3 - PAK)-3


Parameters:

Technical/Catalog InformationIXGJ40N60C2D1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 30A
Power - Max300W
Mounting TypeThrough Hole
Package / CaseTO-268
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGJ40N60C2D1
IXGJ40N60C2D1



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