IGBT Transistors 75 Amps 600V 2.3 V Rds
IXGN50N60B: IGBT Transistors 75 Amps 600V 2.3 V Rds
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| Configuration : | Single Dual Emitter | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | SOT-227B-4 | Packaging : | Tube |
| Symbol | Test Conditions | Maximum | Ratings |
| VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M |
600 600 |
V V |
| VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
| Ic25 Ic90 ICM |
TC = 25°C TC = 90°C TC = 25°C 1 ms |
75 50 200 |
A |
| SSOA (RBSOA) |
VGE= 15 V, TVJ = 125°C, RG = 10 Clamped inductive load, L = 100 H |
ICM = 100 @ 0.8 VCES |
V/ns |
| Pc | TC = 25°C | 250 | W |
| TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
| Md | Mounting torque Terminal connection torque (M4) |
1.5/13 1.5/13 |
Nm/lb.in. Nm/lb.in. |
| Weight | 30 | g | |
| Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 | °C | |
| Technical/Catalog Information | IXGN50N60B |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 75A |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 50A |
| Power - Max | 300W |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227B miniBLOC |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXGN50N60B IXGN50N60B |