IGBT Transistors 20 Amps 1200 V 3.4 Rds
IXGQ20N120BD1: IGBT Transistors 20 Amps 1200 V 3.4 Rds
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
| Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-3P-3 | Packaging : | Tube |
| Symbol | Test Conditions |
Maximum Ratings | |
| VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ |
1200 1200 |
V V |
| VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
| IC25 IC110 ICM |
TC = 25°C TC = 90°C TC = 25°C, 1 ms |
40 20 100 |
A A A |
| SSOA (RBSOA) |
VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load |
ICM = 40 @ 0.8 VCES |
A |
| PC | TC = 25°C |
190 |
W |
| TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
| Md | Mounting torque (M3) |
1.13/10Nm/lb.in. | |
| Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 |
°C | |
| Weight |
|
6 |
g |
| Technical/Catalog Information | IXGQ20N120BD1 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 40A |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 20A |
| Power - Max | 190W |
| Mounting Type | Through Hole |
| Package / Case | TO-3P |
| Packaging | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXGQ20N120BD1 IXGQ20N120BD1 |