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IXGR32N170AH1

IGBT Transistors 17 Amps 1700V 5.2 Rds

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SeekIC No. : 00143465 Detail

IXGR32N170AH1: IGBT Transistors 17 Amps 1700V 5.2 Rds

IXGR32N170AH1 Data Sheet

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Part Number:
IXGR32N170AH1
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1700 V
Collector-Emitter Saturation Voltage : 5.2 V Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : ISOPLUS247-3
Packaging : Box    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1700 V
Packaging : Box
Package / Case : ISOPLUS247-3
Collector-Emitter Saturation Voltage : 5.2 V


Parameters:

Technical/Catalog InformationIXGR32N170AH1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)26A
Vce(on) (Max) @ Vge, Ic5.2V @ 15V, 17A
Power - Max200W
Mounting TypeThrough Hole
Package / CaseISOPLUS247?
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGR32N170AH1
IXGR32N170AH1



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