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IXGT16N170A

IGBT Transistors 32 Amps 1700 V 5 V Rds

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SeekIC No. : 00143069 Detail

IXGT16N170A: IGBT Transistors 32 Amps 1700 V 5 V Rds

IXGT16N170A Data Sheet

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Part Number:
IXGT16N170A
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1700 V
Collector-Emitter Saturation Voltage : 5 V Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-268-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1700 V
Package / Case : TO-268-3
Collector-Emitter Saturation Voltage : 5 V


Features:

·International standard packages JEDEC TO-268 and JEDEC TO-247 AD
·High current handling capability
·MOS Gate turn-on
   -drive simplicity
·Rugged NPT structure
·Molding epoxies meet UL 94 V-0
·flammability classification

 




Application

·Capacitor discharge & pulser circuits
·AC motor speed control
·DC servo and robot drives
·DC choppers
·Uninterruptible power supplies (UPS)
·Switched-mode and resonant-mode power supplies


Specifications

Symbol Test Conditions IXFK Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M		 1700
1700		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 V
V
Ic25
Ic90
ICM
 TC = 25°C
TC = 90 °C
TC = 25°C 1 ms
 16
8
40

A
A
A


SSOA
(RBSOA)		 VGE= 15 V, TVJ = 125°C, RG = 10
Clamped inductive load, L = 100 H		 ICM = 40
@ 0.8 VCES		 V/ns
tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω 10 µs
Pc TC = 25°C 190 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
Md Mounting torque (M3) 1.13/10 Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s		 300 °C
Weight
 TO-204
TO-247
 6
4
 g
g



Parameters:

Technical/Catalog InformationIXGT16N170A
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)16A
Vce(on) (Max) @ Vge, Ic5V @ 15V, 11A
Power - Max190W
Mounting TypeSurface Mount
Package / CaseTO-268
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGT16N170A
IXGT16N170A



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