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IXGT20N120

IGBT Transistors 40 Amps 1200V 3 V Rds

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SeekIC No. : 00143510 Detail

IXGT20N120: IGBT Transistors 40 Amps 1200V 3 V Rds

IXGT20N120 Data Sheet

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Part Number:
IXGT20N120
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-268-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-268-3


Features:

•International standard packages
  JEDEC TO-247 and TO-268
•High current handling capability
•MOS Gate turn-on
  - drive simplicity


Application

•AC motor speed control
•DC servo and robot drives
•DC choppers
•Uninterruptible power supplies (UPS)
•Switch-mode and resonant-mode power supplies
•Capacitor discharge


Parameters:

Technical/Catalog InformationIXGT20N120
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)40A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Power - Max150W
Mounting TypeSurface Mount
Package / CaseTO-268
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGT20N120
IXGT20N120



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