IGBT Transistors 75 Amps 600V 1.7 Rds
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Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
Specifications VCES TJ = 25 to 150 1200 V VCGR TJ = 25 to 150; RGE = 1 M 1200 V V...
Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
| Collector-Emitter Saturation Voltage : | 1.7 V | Maximum Gate Emitter Voltage : | 20 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | TO-268-3 |
| Packaging : | Tube |
| Technical/Catalog Information | IXGT60N60 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 75A |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 60A |
| Power - Max | 300W |
| Mounting Type | Surface Mount |
| Package / Case | TO-268 |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXGT60N60 IXGT60N60 |