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IXGX32N170H1

IGBT Transistors 32 Amps 1700V 2.5 Rds

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SeekIC No. : 00143474 Detail

IXGX32N170H1: IGBT Transistors 32 Amps 1700V 2.5 Rds

IXGX32N170H1 Data Sheet

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Part Number:
IXGX32N170H1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1700 V
Collector-Emitter Saturation Voltage : 3.3 V Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C Package / Case : PLUS 247-3
Packaging : Box    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1700 V
Package / Case : PLUS 247-3
Packaging : Box
Collector-Emitter Saturation Voltage : 3.3 V


Parameters:

Technical/Catalog InformationIXGX32N170H1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)75A
Vce(on) (Max) @ Vge, Ic3.3V @ 15V, 32A
Power - Max350W
Mounting TypeThrough Hole
Package / CasePLUS 247
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGX32N170H1
IXGX32N170H1



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