IGBT Transistors 70 Amps 1200V 3.3 V Rds
IXGX35N120B: IGBT Transistors 70 Amps 1200V 3.3 V Rds
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Features: • Square RBSOA• High current handling capability• MOS Gate turn-on for...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V |
| Collector-Emitter Saturation Voltage : | 3.3 V | Maximum Gate Emitter Voltage : | 20 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | PLUS 247-3 |
| Packaging : | Tube |
| Technical/Catalog Information | IXGX35N120B |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 70A |
| Vce(on) (Max) @ Vge, Ic | 3.3V @ 15V, 35A |
| Power - Max | 350W |
| Mounting Type | Through Hole |
| Package / Case | PLUS 247 |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXGX35N120B IXGX35N120B |