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IXKF40N60SCD1

MOSFET 40 Amps 600V

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SeekIC No. : 00158278 Detail

IXKF40N60SCD1: MOSFET 40 Amps 600V

IXKF40N60SCD1 Data Sheet

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Part Number:
IXKF40N60SCD1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 38 A
Resistance Drain-Source RDS (on) : 0.07 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS i4-Pac Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 38 A
Resistance Drain-Source RDS (on) : 0.07 Ohms
Package / Case : ISOPLUS i4-Pac


Features:

• fast CoolMOS power MOSFET - 2nd generation
   - High blocking voltage
   - Low on resistance
   - Low thermal resistance due to reduced chip thickness
• Series Schottky diode prevents current flow through MOSFET's body diode
   - very low forward voltage
   - fast switching
• Ultra fast HiPerFREDTM anti parallel diode
   - low operating forward voltage
   - fast and soft reverse recovery - low switching losses
• ISOPLUS i4-PACTM high voltage package
   - isolated back surface
   - low coupling capacity between pins and heatsink
   - enlarged creepage towards heatsink
   - enlarged creepage between high voltage pins
   - application friendly pinout
   - high reliability
   - industry standard outline


Application

Converters with
·circuit operation leading to current flow through switches in reverse direction - e. g.
   - phaseleg with inductive load
   - resonant circuits
·high switching frequency


Specifications

VDSS
TVJ = 25 to 150
600
V
VGS
±20
V
ID25
ID90
TC = 25
TC = 90
38
25
A
A



Parameters:

Technical/Catalog InformationIXKF40N60SCD1
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C38A
Rds On (Max) @ Id, Vgs70 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds -
Power - Max-
PackagingTube
Gate Charge (Qg) @ Vgs250nC @ 10V
Package / CaseISOPLUS i4-PAC?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXKF40N60SCD1
IXKF40N60SCD1



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