MOSFET 10 Amps 600V
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Features: • Fast CoolMOS power MOSFET - 4th eneration- High blocking capability- Lowest resi...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 5.4 A |
Resistance Drain-Source RDS (on) : | 0.385 Ohms | Configuration : | Single |
Mounting Style : | Through Hole | Package / Case : | TO-220ABFP |
Packaging : | Tube |
Technical/Catalog Information | IXKP10N60C5M |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 5.4A |
Rds On (Max) @ Id, Vgs | 385 mOhm @ 5.2A, 10V |
Input Capacitance (Ciss) @ Vds | 790pF @ 100V |
Power - Max | - |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 22nC @ 10V |
Package / Case | TO-220FP |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXKP10N60C5M IXKP10N60C5M |