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IXKP10N60C5M

MOSFET 10 Amps 600V

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SeekIC No. : 00154409 Detail

IXKP10N60C5M: MOSFET 10 Amps 600V

IXKP10N60C5M Data Sheet

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Part Number:
IXKP10N60C5M
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5.4 A
Resistance Drain-Source RDS (on) : 0.385 Ohms Configuration : Single
Mounting Style : Through Hole Package / Case : TO-220ABFP
Packaging : Tube    

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.385 Ohms
Continuous Drain Current : 5.4 A
Package / Case : TO-220ABFP


Parameters:

Technical/Catalog InformationIXKP10N60C5M
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C5.4A
Rds On (Max) @ Id, Vgs385 mOhm @ 5.2A, 10V
Input Capacitance (Ciss) @ Vds 790pF @ 100V
Power - Max-
PackagingTube
Gate Charge (Qg) @ Vgs22nC @ 10V
Package / CaseTO-220FP
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXKP10N60C5M
IXKP10N60C5M



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