IGBT Transistors 30 Amps 1200V 3.4 Rds
IXSA15N120B: IGBT Transistors 30 Amps 1200V 3.4 Rds
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
| Collector-Emitter Saturation Voltage : | 3.4 V | Maximum Gate Emitter Voltage : | +/- 20 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | TO-263-3 |
| Packaging : | Box |
| Symbol | Test Conditions | Maximum | Ratings |
| VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M |
1000 1000 |
V V |
| VGES VGEM |
Continuous Transient |
±20 ±30 |
V |
| ID25 ID90 ICM |
TC = 25°C TC = 90°C TC = 25°C, 1 ms |
30 15 60 |
A |
| SSOA (RBSOA) |
VGE = 15 V, TJ = 125°C, RG = 2.7 Clamped inductive load, VCC= 0.8 VCES |
ICM = 40 @ 0.8 VCES |
A |
| tSC (SCSOA) |
VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 ?, non repetitive |
10 | s |
| PC | TC = 25°C | 150 | W |
| TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
| Md | Mounting torque | 1.13/10 | Nm/lb.in. |
| Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 | °C | |
| Maximum tab temperature for soldering (TO-263) | 260 | °C | |
| Weight | TO-220 TO-263 |
4 2 |
g g |
| Technical/Catalog Information | IXSA15N120B |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 30A |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 15A |
| Power - Max | 150W |
| Mounting Type | Surface Mount |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| Packaging | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXSA15N120B IXSA15N120B |