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IXSH10N60B2D1

IGBT Transistors 10 Amps 600V 2.5 Rds

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SeekIC No. : 00143937 Detail

IXSH10N60B2D1: IGBT Transistors 10 Amps 600V 2.5 Rds

IXSH10N60B2D1 Data Sheet

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Part Number:
IXSH10N60B2D1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.5 V Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : +/- 100 nA Power Dissipation : 100 W
Maximum Operating Temperature : + 150 C Package / Case : TO-247-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 2.5 V
Power Dissipation : 100 W


Parameters:

Technical/Catalog InformationIXSH10N60B2D1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)20A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 10A
Power - Max100W
Mounting TypeThrough Hole
Package / CaseTO-247
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSH10N60B2D1
IXSH10N60B2D1



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