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IXSH15N120B

IGBT Transistors 30 Amps 1200V 3.4 Rds

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SeekIC No. : 00143073 Detail

IXSH15N120B: IGBT Transistors 30 Amps 1200V 3.4 Rds

IXSH15N120B Data Sheet

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Part Number:
IXSH15N120B
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 3.4 V Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-247-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3
Collector-Emitter Saturation Voltage : 3.4 V


Parameters:

Technical/Catalog InformationIXSH15N120B
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)30A
Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 15A
Power - Max150W
Mounting TypeThrough Hole
Package / CaseTO-247
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSH15N120B
IXSH15N120B



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