IGBT Transistors 50 Amps 1200V 4.0 Rds
IXSH25N120A: IGBT Transistors 50 Amps 1200V 4.0 Rds
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Features: ·International standard package JEDEC TO-247·High frequency IGBT with guaranteed Short C...
Features: • International standard package JEDEC TO-247• High frequency IGBT with guar...
Features: • High voltage IGBT with guaranteed short circuit SOA capability.• IGBT with...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
| Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-247AD-3 | Packaging : | Tube |
| Symbol | Test Conditions | Maximum | Ratings |
| VCES VCGR |
TJ = 25 to 150 600 TJ= 25 to 150 ; RGE = 1 M |
1200 1200 |
V |
| VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
| IC25 IC90 ICM |
TC = 25 TC = 90 TC = 25 , 1 ms |
50 25 80 |
A A A |
| SSOA (RBSOA) |
VGE= 15 V, TVJ = 125 , RG = 10 Clamped inductive load, L = 100H |
ICM = 50 @ 0.8 VCES |
A |
| tSC (SCSOA) |
VGE= 15 V, VCE = 360 V, TJ = 125 , RG = 82, non-repetitive |
10 | s |
| PC | TC = 25 | 200 | W |
| TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
| |
| Md | Mounting torque, TO-247 | 1.15/10 | Nm/lb.in. |
| Weight | 6 | g | |
| Max. Lead Temperature for Soldering (1.6mm from case for 10s) |
300 | °C | |
| Technical/Catalog Information | IXSH25N120A |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 50A |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 25A |
| Power - Max | 200W |
| Mounting Type | Through Hole |
| Package / Case | TO-247AD |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXSH25N120A IXSH25N120A |