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IXSH30N60B2D1

IGBT Transistors 30 Amps 600V 2.5 Rds

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SeekIC No. : 00143076 Detail

IXSH30N60B2D1: IGBT Transistors 30 Amps 600V 2.5 Rds

IXSH30N60B2D1 Data Sheet

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Part Number:
IXSH30N60B2D1
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2 V Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : +/- 100 nA Power Dissipation : 250 W
Maximum Operating Temperature : + 150 C Package / Case : TO-247-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2 V
Power Dissipation : 250 W
Package / Case : TO-247-3
Gate-Emitter Leakage Current : +/- 100 nA


Parameters:

Technical/Catalog InformationIXSH30N60B2D1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)48A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 24A
Power - Max250W
Mounting TypeThrough Hole
Package / CaseTO-247
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSH30N60B2D1
IXSH30N60B2D1



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