IXSH35N120A

IGBT Transistors HIGH SPEED IGBT 1200V, 70A

product image

IXSH35N120A Picture
SeekIC No. : 00143614 Detail

IXSH35N120A: IGBT Transistors HIGH SPEED IGBT 1200V, 70A

floor Price/Ceiling Price

Part Number:
IXSH35N120A
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/3

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247AD-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247AD-3


Description

The IXSH35N120A is a kind of high voltage,high speed IGBT and has short circuit SOA capability. The IXSH35N120A can be used in apllications such as AC motor speed control,DC servo and robot drive,uninterruptible power supplies (UPS),switch-mode and resonant-mode power supplies and welding. The IXSH35N120A is available in TO-247 AD package.

There are some features of IXSH35N120A as follows. (1) international standard package; (2) high frequency IGBT with guaranteed; (3) fast fall time for switching speeds up to 20 kHz; (4) 2nd generation HDMOSTM process; (5) low VCE(sat); (6) MOS gate turn-on; (7) easy to mount with 1 screw; (8) high power density.

What comes next is maximum ratings of IXSH35N120A. (1): VCES is 1200 V when Tj is from 25 to 150 ; (2): VCGR is 1200 V when Tj is from 25 to 150 and RGE is 1 M; (3): VGES (continuous) is ±20 V and VGEM (transient) is ±30 V; (4): IC25 is 70 A at TC is 25 and IC90 is 35 A at IC is 90 ; (5): ICM is 140 A when TC is 25 ,1 ms; (6): Pc is 300 w when TC is 25 ; (7): TJ is from -55 to 150 ; (8): Tstg is from -55 to 150 ; (8): the minimum VBCES is 1200 V when IC is 3 mA and VGE is 0 V; (9): the maximum ICES is 400 A at VCE is 0.8*VCES and Tj is 25 . If you want more details,please download the datasheet at www.seekic.com.




Parameters:

Technical/Catalog InformationIXSH35N120A
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)70A
Vce(on) (Max) @ Vge, Ic4V @ 15V, 35A
Power - Max300W
Mounting TypeThrough Hole
Package / CaseTO-247AD
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSH35N120A
IXSH35N120A



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Batteries, Chargers, Holders
Discrete Semiconductor Products
Cables, Wires
Audio Products
Prototyping Products
DE1
View more