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IXSK35N120BD1

IGBT Transistors 70 Amps 1200V 3.6 Rds

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SeekIC No. : 00143475 Detail

IXSK35N120BD1: IGBT Transistors 70 Amps 1200V 3.6 Rds

IXSK35N120BD1 Data Sheet

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Part Number:
IXSK35N120BD1
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 3.6 V Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-264-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-264-3
Collector-Emitter Saturation Voltage : 3.6 V


Parameters:

Technical/Catalog InformationIXSK35N120BD1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)70A
Vce(on) (Max) @ Vge, Ic3.6V @ 15V, 35A
Power - Max300W
Mounting TypeThrough Hole
Package / CaseTO-264AA
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSK35N120BD1
IXSK35N120BD1



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