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IXSN50N60BD2

IGBT Transistors 75 Amps 600V 2.5 Rds

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SeekIC No. : 00143561 Detail

IXSN50N60BD2: IGBT Transistors 75 Amps 600V 2.5 Rds

IXSN50N60BD2 Data Sheet

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Part Number:
IXSN50N60BD2
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Configuration : Single Dual Emitter Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : SOT-227B-4 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Maximum Gate Emitter Voltage : +/- 20 V
Configuration : Single Dual Emitter
Package / Case : SOT-227B-4


Parameters:

Technical/Catalog InformationIXSN50N60BD2
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 50A
Power - Max250W
Mounting TypeChassis Mount
Package / CaseSOT-227B miniBLOC
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSN50N60BD2
IXSN50N60BD2



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