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IXSQ20N60B2D1

IGBT Transistors 20 Amps 600V 2.5 Rds

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SeekIC No. : 00142959 Detail

IXSQ20N60B2D1: IGBT Transistors 20 Amps 600V 2.5 Rds

IXSQ20N60B2D1 Data Sheet

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Part Number:
IXSQ20N60B2D1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Collector- Emitter Voltage VCEO Max : 600 V Collector-Emitter Saturation Voltage : 2.5 V
Gate-Emitter Leakage Current : +/- 100 nA Power Dissipation : 190 W
Package / Case : TO-3P Packaging : Tube    

Description

Maximum Gate Emitter Voltage :
Continuous Collector Current at 25 C :
Configuration :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 2.5 V
Package / Case : TO-3P
Power Dissipation : 190 W


Parameters:

Technical/Catalog InformationIXSQ20N60B2D1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)35A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 16A
Power - Max190W
Mounting TypeThrough Hole
Package / CaseTO-3P
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSQ20N60B2D1
IXSQ20N60B2D1



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