IGBT Transistors 20 Amps 600V 2.5 Rds
IXSQ20N60B2D1: IGBT Transistors 20 Amps 600V 2.5 Rds
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Collector- Emitter Voltage VCEO Max : | 600 V | Collector-Emitter Saturation Voltage : | 2.5 V | ||
Gate-Emitter Leakage Current : | +/- 100 nA | Power Dissipation : | 190 W | ||
Package / Case : | TO-3P | Packaging : | Tube |
Technical/Catalog Information | IXSQ20N60B2D1 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 35A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 16A |
Power - Max | 190W |
Mounting Type | Through Hole |
Package / Case | TO-3P |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXSQ20N60B2D1 IXSQ20N60B2D1 |