IGBT Transistors 70 Amps 1200V 3.6 Rds
IXSR35N120BD1: IGBT Transistors 70 Amps 1200V 3.6 Rds
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V |
| Collector-Emitter Saturation Voltage : | 3.6 V | Maximum Gate Emitter Voltage : | +/- 20 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | ISOPLUS247-3 |
| Packaging : | Bulk |
| Technical/Catalog Information | IXSR35N120BD1 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 70A |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 30A |
| Power - Max | 250W |
| Mounting Type | Through Hole |
| Package / Case | ISOPLUS247? |
| Packaging | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXSR35N120BD1 IXSR35N120BD1 |