IGBT Transistors 70 Amps 1200V 3.6 Rds
IXST35N120B: IGBT Transistors 70 Amps 1200V 3.6 Rds
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V |
| Collector-Emitter Saturation Voltage : | 3.6 V | Maximum Gate Emitter Voltage : | 20 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | TO-268-3 |
| Packaging : | Tube |
| Symbol | Test Conditions | Maximum | Ratings |
| VCES VCGR |
TJ = 25 to 150 600 TJ= 25 to 150 ; RGE = 1 M |
1200 1200 |
V |
| VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
| IC25 IC90 ICM |
TC = 25 TC = 90 TC = 25 , 1 ms |
70 35 140 |
A A A |
| SSOA (RBSOA) |
VGE= 15 V, TVJ = 125 , RG = 10 Clamped inductive load, L = 100H |
ICM =90 @ 0.8 VCES |
A |
| tSC (SCSOA) |
VGE= 15 V, VCE = 360 V, TJ = 125 , RG = 82, non-repetitive |
10 | s |
| PC | TC = 25 | 300 | W |
| TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
| |
| Md | Mounting torque, TO-247 | 1.13/10 | Nm/lb.in. |
| Max. Lead Temperature for Soldering (1.6mm from case for 10s) |
300 | °C | |
| Weight | TO-247 TO-268 |
6 4 |
g g |
| Technical/Catalog Information | IXST35N120B |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 70A |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 35A |
| Power - Max | 300W |
| Mounting Type | Surface Mount |
| Package / Case | TO-268 |
| Packaging | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXST35N120B IXST35N120B |