IXSX80N60B

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.5 V
Package / Case : PLUS 247-3


Features:

· International standard packages
·Very high current, fast switching IGBT
· Low VCE(sat)
- for minimum on-state conduction losses
· MOS Gate turn-on
- drive simplicity


Application

· AC motor speed control
· DC servo and robot drives
· DC choppers
· Uninterruptible power supplies (UPS)
·Switch-mode and resonant-modepower supplies


Specifications

Symbol           Test Conditions                                                             Maximum Ratings

VCES        TJ = 25°C to 150°C                                                           600                   V VCGR        TJ = 25°C to 150°C; RGS = 1 M                                      600                   V

VCES         Continuous                                                                        ±20                   V VGEM         Transient                                                                           ±30                   V

IC25          TC = 25°C (silicon chip capability)                                     160                   A IC90          TC = 90°C (silicon chip capability)                                      80                    A IL(RMS)      TC = 90°C (silicon chip capability)                                      75                   A ICM            TC = 25°C, 1 ms                                                               300                   A

SSOA          VGE = 15 V, TVJ = 125°C, RG = 5                        ICM = 160                    A (RBSOA)      Clamped inductive load                                         @ 0.8 VCES

tsc               VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C 10 s SCSOA         RG = 5 , non-repetitive

PC                TC = 25°C                                                                       500                   W

TJ                                                                                             -55 ... +150                  °C TJM                                                                                                      150                   °C Tstg                                                                                        -55 ... +150                   °C

TL                 1.6 mm (0.063 in.) from case for 10 s                             300                   °C

Md                Mounting torque TO-264 0.4/6 Nm/lb.in

Weight          PLUS 247                                                                           6                       g                      TO-264                                                                              10                      g

Parameters:

Technical/Catalog Information	IXSX80N60B
Vendor	IXYS
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	160A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 80A
Power - Max	500W
Mounting Type	Through Hole
Package / Case	PLUS 247
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXSX80N60B IXSX80N60B